prikaz prve stranice dokumenta Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology
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doctoral thesis
Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. urn:nbn:hr:168:405854
Koričić, Marko
University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems

Institutional repository: FER Repository

Cite this document

Koričić, M. (2008). Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology (Doctoral thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:405854

Koričić, Marko. "Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. https://urn.nsk.hr/urn:nbn:hr:168:405854

Koričić, Marko. "Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. https://urn.nsk.hr/urn:nbn:hr:168:405854

Koričić, M. (2008). 'Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 08 December 2024, https://urn.nsk.hr/urn:nbn:hr:168:405854

Koričić M. Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2008 [cited 2024 December 08] Available at: https://urn.nsk.hr/urn:nbn:hr:168:405854

M. Koričić, "Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2008. Available at: https://urn.nsk.hr/urn:nbn:hr:168:405854

Metadata
TitleHorizontal Current Bipolar Transistor Structures for Integration with CMOS Technology
Title (croatian)Strukture bipolarnog tranzistora s horizontalnim tokom struje za integraciju sa CMOS tehnologijom
AuthorMarko Koričić
MentorTomislav Suligoj (mentor)
MentorSlavko Amon (komentor)
VIAF: 306151014
Committee memberPetar Biljanović (predsjednik povjerenstva)
Committee memberTomislav Suligoj (član povjerenstva)
Committee memberSlavko Amon (član povjerenstva)
VIAF: 306151014
Committee memberMikael Östling (član povjerenstva)
VIAF: 59411185
Committee memberŽeljko Butković (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
(Department of Electronics, Microelectronics, Computer and Intelligent Systems)
Zagreb
Defense date and country2008-07-03, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Electronics
Universal decimal classification
(UDC)		621.3 - Electrical engineering
Abstract
Integration of HCBT structure into 0.18 μm CMOS process using the base after gate integration scheme is presented. Process is modified compared to previous HCBT technology. Standard bulk CMOS wafers with <100> orientation are used as a substrate for transistor fabrication. CMOS shallow trench isolation (STI) is used for definition of active area of the device as well as for device isolation. Transistors are made on the sidewalls defined by the STI which are exposed by masked oxide etching. Intrinsic transistor is processed on the exposed sidewall obtaining the emitter to base self-alignment. Since <100> wafers are used for the transistor fabrication crystallographic dependant etching cannot be employed for emitter polysilicon etching. Property of TMAH selectivity to native oxide is used for protection of the active transistor area at the polysilicon etching step. Transistor height is scaled approximately six times compared to previous HCBT technology. Transistors with 350 nm height and state of the art performance are successfully processed. Two novel HCBT devices are presented for the first time. Presented single polysilicon region HCBT has fT and fmax as high as 51.8 and 63.6 GHz respectively and fTBVCEO product of 155.4 GHzV. Double emitter structure uses the three dimensional charge sharing effect for improvement of breakdown voltages. Presented double emitter HCBT has common emitter breakdown voltage (BVCEO) of 15 V and Early voltage, (VA) of 141 V. All proposed HCBT structures can be fabricated in the same technological process which makes HCBT BiCMOS technology flexible and low cost BiCMOS platform for RF applications.
Abstract (croatian)
U radu je prikazana integracija HCBT strukture u 0,18 μm CMOS proces korištenjem integracijeske sheme baza nakon upravljačke elektrode. Proces je modificiran u odnosu na prethodnu HCBT tehnologiju. Za podlogu tranzistora koristi se silicijska pločica kristalne orijentacije <100> koja predstavlje standardnu podlogu za CMOS tehnologiju. CMOS izolacija plitkim žlijebom koristi se za definiciju aktivnih dijelova elemenata kao i za njihovu izolaciju. Tranzistor se procesira na bokovima silicijskih otoka definiranih izolacijom plitkim žlijebom. Bokovi se izlažu maskiranim jetkanjem oksida i na njima se procesira intrinzični tranzistor čime se dobiva samopodešavanje između emitera i baze. Pošto se koriste silicijske pločice kristalne orijentacije <100>, kristalografski osjetljivo jetkanje ne može se koristiti za jetkanje emiterskog polisilicija. Svojstvo selektivnosti TMAH-a prema prirodnom oksidu koristi se za zaštitu aktivnog tranzistora prilikom jetkanja emiterskog polisilicija. Visina tranzistora je skalirana približno šest puta u odnosu na prethodnu HCBT tehnologiju. Procesirani su tranzistori s visinom 350 nm i vrhunskim karakteristikama. Po prvi puta su predstavljene dvije nove HCBT strukture. HCBT s jednim polisilicijskim područjem ima fT i fmax iznosa čak 51,8 i 63,6 GHz i produkt fTBVCEO iznosa 155,4 GHzV. Struktura s dvostrukim emiterom koristi trodimenzionalni efekt dijeljenja naboja za postizanje visokog probojnog napona. HCBT s dvostrukim emiterom ima probojni napon u spoju zajedničkog emitera iznosa 15 V i Early-ev napon iznosa 141 V. Sve predložene strukture mogu biti proizvedene istim tehnološkim procesom što HCBT BiCMOS tehnologiju čini fleksibilnom platformom za RF primjene.
Keywords
Keywords (croatian)
Languageenglish
URN:NBNurn:nbn:hr:168:405854
Study programmeTitle: Electrical Engineering and Computing
Study programme type: university
Study level: postgraduate
Academic / professional title: Doktor znanosti elektrotehnike i računarstva (Doktor znanosti elektrotehnike i računarstva)
Type of resourceText
File originBorn digital
Access conditionsClosed access
Terms of useLicence In copyright icon
Created on2020-05-30 14:09:55