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master's thesis
Karakteristike bipolarnih tranzistora u režimu velikog signala
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2021. urn:nbn:hr:168:353945
Farkaš, Bruno
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

Cite this document

Farkaš, B. (2021). Karakteristike bipolarnih tranzistora u režimu velikog signala (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:353945

Farkaš, Bruno. "Karakteristike bipolarnih tranzistora u režimu velikog signala." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2021. https://urn.nsk.hr/urn:nbn:hr:168:353945

Farkaš, Bruno. "Karakteristike bipolarnih tranzistora u režimu velikog signala." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2021. https://urn.nsk.hr/urn:nbn:hr:168:353945

Farkaš, B. (2021). 'Karakteristike bipolarnih tranzistora u režimu velikog signala', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 27 December 2024, https://urn.nsk.hr/urn:nbn:hr:168:353945

Farkaš B. Karakteristike bipolarnih tranzistora u režimu velikog signala [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2021 [cited 2024 December 27] Available at: https://urn.nsk.hr/urn:nbn:hr:168:353945

B. Farkaš, "Karakteristike bipolarnih tranzistora u režimu velikog signala", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2021. Available at: https://urn.nsk.hr/urn:nbn:hr:168:353945

Metadata
TitleKarakteristike bipolarnih tranzistora u režimu velikog signala
Title (english)Large Signal Characteristics of Bipolar Transistors
AuthorBruno Farkaš
MentorTomislav Suligoj (mentor)
Committee memberTomislav Suligoj (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberJosip Žilak (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2021-07-14, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Bipolarni tranzistori su poluvodički elektronički elementi koji imaju puno karakteristika koje se mogu mjeriti, istraživati i ispitivati njihove ovisnosti. Opisana je uloga tranzistora u pojačalima snage i njihovi modeli u režimima velikog i malog signala. Istražena su pojačala snage i njihove klase. Istraživanje je fokusirano na tranzistor s horizontalnim tokom struje, pa je opisana njegova struktura i koraci u proizvodnji takvog tranzistora. Postavljen je mjerni sustav za mjerenje karakteristika u režimu velikog signala za pojačalo klase A. Mjerni sustav je kalibriran da može raditi na niskim i visokim frekvencijama. Istražene su visokofrekventne karakteristike HCBT-a, prikazano je područje gdje dolazi do Kirk efekta i efekt gdje radni pravci prelaze preko proboja. Istražene su niskofrekventne karakteristike, pa zatim ovisnost karakteristika i radnih pravaca o samoj frekvenciji. Zatim su ispitane toplinske ovisnosti karakteristika i uspoređene s komercijalnim tranzistorima.
Abstract (english)
Bipolar Transistors are semiconductor electronic elements that have many characteristics that can be measured, researched, and tested for their dependencies. The role of transistors in power amplifiers and their large and small-signal models are described. Power amplifiers and their classes are explored. The research is focused on the Horizontal Current Bipolar Transistor, so structure and steps in the fabrication of such transistor are described. The measurement setup has been prepared to measure the characteristics in large-signal mode for a Class A amplifier. The measurement setup is calibrated to be able to operate at low and high frequencies. The high-frequency characteristics of HCBT are examined, the area where Kirk effect occurs and the effect where load line crosses breakdown is shown. Low-frequency characteristics are explored, followed by frequency dependence of characteristics and load lines. The thermal dependences of the characteristics are then examined and compared with commercial transistors.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:353945
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2023-01-13 14:52:22