prikaz prve stranice dokumenta Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima
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undergraduate thesis
Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. urn:nbn:hr:168:094857
Mihaljević, Mirko
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

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Mihaljević, M. (2020). Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima (Undergraduate thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:094857

Mihaljević, Mirko. "Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima." Undergraduate thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. https://urn.nsk.hr/urn:nbn:hr:168:094857

Mihaljević, Mirko. "Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima." Undergraduate thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. https://urn.nsk.hr/urn:nbn:hr:168:094857

Mihaljević, M. (2020). 'Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima', Undergraduate thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 19 October 2024, https://urn.nsk.hr/urn:nbn:hr:168:094857

Mihaljević M. Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima [Undergraduate thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2020 [cited 2024 October 19] Available at: https://urn.nsk.hr/urn:nbn:hr:168:094857

M. Mihaljević, "Analiza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima", Undergraduate thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2020. Available at: https://urn.nsk.hr/urn:nbn:hr:168:094857

Metadata
TitleAnaliza rezonantne tunelske diode temeljene na grafenskim nanovrpcama s idealnim rubovima
Title (english)Analysis of a resonant tunneling diode based on graphene nanoribbons with ideal edges
AuthorMirko Mihaljević
MentorMirko Poljak (mentor)
Committee memberMirko Poljak (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberŽeljko Osrečki (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2020-09-15, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Computing
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema zabranjeni pojas. Jedan od načina dobivanja zabranjenog pojasa je oblikovanje grafena u nanovrpce (GNR) koje se dobiju ograničavanjem širine na nekoliko nanometara. Kombiniranjem grafenskih nanovrpci različitih širina mogu se realizirati lateralne rezonantne tunelske diode. Za analizu ove strukture korišten je kvantni transport (NEGF) s dva kontakta koja su predstavljena pomoću dva polubeskonačna područja. Razmatrala se promjena strujno-naponskih karakteristika GNR RTD-ova u ovisnosti o TQW i TB, te usporedba karakteristika sa SiNR RTD-ovima. Pokazano je da se povećavanjem duljine jame i barijera mogu dobiti bolje karakteristike kod GNR RTD-ova u odnosu na one kod SiNR RTD-ova.
Abstract (english)
Graphene is a 2D material with excellent electronic and transport properties, but its disadvantage is that it does not have a bandgap. One of the approaches for inducing a bandgap is by shaping graphene into nanoribbons (GNR) which are obtained by limiting the width to a few nanometers. By combining graphene nanoribbons of different widths, resonant tunneling diodes can be realized. Quantum transport (NEGF) with two contacts represented by two semi-infinite domains was used to analyze the GNR RTD structures. The change of GNR RTD performance characteristics depending on TB and TQW was analyzed, as well as the comparison with SiNR RTD. It has been shown that by increasing the well and barrier length, better device properties can be obtained with GNR RTDs in comparison to SiNR RTDs.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:094857
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: undergraduate
Academic / professional title: sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije (sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije)
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File originBorn digital
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Created on2023-01-14 09:32:50