prikaz prve stranice dokumenta Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities
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Scientific paper - Original scientific paper
Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities
Physical review. B., 102 (2020), 24; 241111(R). https://doi.org/10.1103/PhysRevB.102.241111
Krsnik, Juraj; Batistić, Ivo; Marunović, Anja; Tutiš, Eduard; Barišić, Osor-Slaven

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Krsnik, J., Batistić, I., Marunović, A., Tutiš, E. & Barišić, O. S. (2020). Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities. Physical review. B., 102. (24). doi: 10.1103/PhysRevB.102.241111

Krsnik, Juraj, et al. "Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities." Physical review. B., vol. 102, no. 24, 2020. https://doi.org/10.1103/PhysRevB.102.241111

Krsnik, Juraj, Ivo Batistić, Anja Marunović, Eduard Tutiš and Osor Slaven Barišić. "Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities." Physical review. B. 102, no. 24 (2020). https://doi.org/10.1103/PhysRevB.102.241111

Krsnik, J., et al. (2020) 'Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities', Physical review. B., 102(24). doi: 10.1103/PhysRevB.102.241111

Krsnik J, Batistić I, Marunović A, Tutiš E, Barišić OS. Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities. Physical review. B. [Internet]. 2020 [cited 2024 July 03];102(24). doi: 10.1103/PhysRevB.102.241111

J. Krsnik, I. Batistić, A. Marunović, E. Tutiš and O. S. Barišić, "Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities", Physical review. B., vol. 102, no. 24, 2020. [Online]. Available at: https://urn.nsk.hr/urn:nbn:hr:217:793160. [Accessed: 03 July 2024]

Metadata
Title (english)Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities
AuthorJuraj Krsnik
AuthorIvo Batistić
AuthorAnja Marunović
AuthorEduard Tutiš
AuthorOsor-Slaven Barišić
Author's institutionUniversity of Zagreb
Faculty of Science
(Department of Physics)
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract (english)
The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a complex energy dependence of the scattering cross section in such systems. Here we derive the exact solution of polaronic impurities shaping the electronic transport in bulk (3D) systems. In the model with a short-ranged electron-phonon interaction, we solve for and sum over all elastic and inelastic partial cross sections, abundant in resonant features. The temperature dependence of the charge mobility shows the power-law dependence, μ(T)∝T^−ν, with ν being highly sensitive to impurity parameters. The latter may explain nonuniversal power-law exponents observed experimentally, e.g., in high-quality organic molecular semiconductors.
Keywords (english)
Languageenglish
Publication typeScientific paper - Original scientific paper
Publication statusPublished
Peer reviewPeer review - international
Publication versionPublished version
Journal titlePhysical review. B.
Numberingvol. 102, no. 24, 241111(R)
p-ISSN2469-9950
DOIhttps://doi.org/10.1103/PhysRevB.102.241111
URN:NBNurn:nbn:hr:217:793160
Publication2020
ProjectNumber: IP-2016-06-7258
Title (croatian): Fizika mnogočestičnih sustava - iskorištavanje svijeta kompleksnosti
Acronym: COMPLEX_ORBIS
Leader: Osor-Slaven Barišić
Jurisdiction: Croatia
Funding stream: IP
Document URLhttp://bib.irb.hr/1098778
Type of resourceText
Access conditionsOpen access
Terms of useLicence In copyright icon
Public note© 2020 American Physical Society. Received 31 July 2020; Revised 19 November 2020; Accepted 30 November 2020; Published 17 December 2020.
Created on2023-04-03 19:58:40