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master's thesis
Uloga bora kao neželjene primjese u n-tipu SiC
Zagreb: University of Zagreb, Faculty of Science, 2023. urn:nbn:hr:217:752340
Jelavić, Eva
University of Zagreb
Faculty of Science
Department of Physics

Institutional repository: Repository of the Faculty of Science

Cite this document

Jelavić, E. (2023). Uloga bora kao neželjene primjese u n-tipu SiC (Master's thesis). Zagreb: University of Zagreb, Faculty of Science. Retrieved from https://urn.nsk.hr/urn:nbn:hr:217:752340

Jelavić, Eva. "Uloga bora kao neželjene primjese u n-tipu SiC." Master's thesis, University of Zagreb, Faculty of Science, 2023. https://urn.nsk.hr/urn:nbn:hr:217:752340

Jelavić, Eva. "Uloga bora kao neželjene primjese u n-tipu SiC." Master's thesis, University of Zagreb, Faculty of Science, 2023. https://urn.nsk.hr/urn:nbn:hr:217:752340

Jelavić, E. (2023). 'Uloga bora kao neželjene primjese u n-tipu SiC', Master's thesis, University of Zagreb, Faculty of Science, accessed 29 November 2024, https://urn.nsk.hr/urn:nbn:hr:217:752340

Jelavić E. Uloga bora kao neželjene primjese u n-tipu SiC [Master's thesis]. Zagreb: University of Zagreb, Faculty of Science; 2023 [cited 2024 November 29] Available at: https://urn.nsk.hr/urn:nbn:hr:217:752340

E. Jelavić, "Uloga bora kao neželjene primjese u n-tipu SiC", Master's thesis, University of Zagreb, Faculty of Science, Zagreb, 2023. Available at: https://urn.nsk.hr/urn:nbn:hr:217:752340

Metadata
TitleUloga bora kao neželjene primjese u n-tipu SiC
Title (english)The role of boron as unwanted impurity in n-type SiC
AuthorEva Jelavić
MentorIvana Capan (mentor)
MentorIvan Kokanović (komentor)
Committee memberIvan Kokanović (predsjednik povjerenstva)
Committee memberIvana Capan (član povjerenstva)
Committee memberDenis Sunko (član povjerenstva)
Committee memberMario Basletić (član povjerenstva)
Committee memberDamir Pajić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Science
(Department of Physics)
Zagreb
Defense date and country2023-09-27, Croatia
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract
U ovom radu proučavan je n-tip silicijevog karbida dopiran dušikom te defekti nastali u materijalu. Korištena je polupropusna Schottkyjeva dioda napravljena na n tipu 4H silicijevog karbida u koju je tijekom rasta kristala nenamjerno unesen bor. Za karakterizaciju diode napravljena su mjerenja ovisnosti struje o naponu te kapaciteta o naponu dok su za proučavanje nosioca naboja korištene metode tranzijentne spektroskopije. Duboki nivoi karakterizirani su tranzijentnom spektroskopijom dubokih nivoa (DLTS, eng. Deep Level Transient Spectroscopy) dok su zamke za manjinske nosioce naboja promatrane tranzijentnom spektroskopijom manjinskih nosioca na boja (MCTS, eng. Minority Carrier Transient Spectroscopy). Iz strujno-naponske karakteristike dobiven je faktor idealnosti diode, a iz kapacitivno-naponske ukupna koncentracija dopiranja. Kod DLTS mjerenja uočen je vrh Z1/2 koji označava duboki nivo nastao vakancijom ugljika. U MCTS spektru uočena su četiri vrha od kojih su dva dobro poznata i nazivaju se B i D-centar. B odgovara defektima nastalim supstitucijom bora na mjestu silicija dok D-centar označava nivoe nastale zbog supstitucije bora na mjestu ugljika. Druga dva vrha nazvana su X i Y te ih je potrebno dodatno istražiti.
Abstract (english)
In this paper, the nitrogen-doped n-type silicon carbide and the defects formed in the material are studied. A semiconductive Schottky diode made on the n-type 4H silicon carbide was used, into which boron was unintentionally introduced during crystal growth. To characterize the diode, measurements were performed to analyze the current-voltage and the capacitance-voltage dependency. Transient spectroscopy methods were employed to study charge carriers, with Deep Level Transient Spectroscopy (DLTS) used to characterize deep levels, and Minority Carrier Transient Spectroscopy (MCTS) utilized to observe traps for minority charge carriers. The diode’s ideality factor was obtained from the current-voltage characteristic, while the total doping concentration was derived from the capacitance-voltage characteristic. In DLTS measurements, a peak Z1/2 was observed, indicating a deep level created by a carbon vacancy. The MCTS spectrum revealed four peaks, two of which are well-known and denoted as B and D-center. B corresponds to defects caused by boron substitution for silicon, while D-center designates levels arising from boron substitution for carbon. The other two peaks are labeled as X and Y and remain to be further explored.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:217:752340
Study programmeTitle: The University Integrated Undergraduate and Graduate Programme in Physics; Research Physics; specializations in: Research Physics
Course: Research Physics
Study programme type: university
Study level: integrated undergraduate and graduate
Academic / professional title: sveučilišni magistar fizike (sveučilišni magistar fizike)
Type of resourceText
File originBorn digital
Access conditionsOpen access
Terms of useLicence In copyright icon
Created on2024-01-30 13:48:42