Knezevic, T., Jelavić, E., Yamazaki, Y., Ohshima, T., Makino, T. & Capan, I. (2023). Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials, 16. (9). doi: 10.3390/ma16093347
Knezevic, Tihomir, et al. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials, vol. 16, no. 9, 2023. https://doi.org/10.3390/ma16093347
Knezevic, Tihomir, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino and Ivana Capan. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials 16, no. 9 (2023). https://doi.org/10.3390/ma16093347
Knezevic, T., et al. (2023) 'Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes', Materials, 16(9). doi: 10.3390/ma16093347
Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials [Internet]. 2023 April 25 [cited 2024 August 25];16(9). doi: 10.3390/ma16093347
T. Knezevic, E. Jelavić, Y. Yamazaki, T. Ohshima, T. Makino and I. Capan, "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes", Materials, vol. 16, no. 9, April 2023. [Online]. Available at: https://urn.nsk.hr/urn:nbn:hr:217:043239. [Accessed: 25 August 2024]