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master's thesis
Električki aktivni defekti u 4H-SiC uvedeni zračenjem
Zagreb: University of Zagreb, Faculty of Science, 2017. urn:nbn:hr:217:888173
Brodar, Tomislav
University of Zagreb
Faculty of Science
Department of Physics

Institutional repository: Repository of the Faculty of Science

Cite this document

Brodar, T. (2017). Električki aktivni defekti u 4H-SiC uvedeni zračenjem (Master's thesis). Zagreb: University of Zagreb, Faculty of Science. Retrieved from https://urn.nsk.hr/urn:nbn:hr:217:888173

Brodar, Tomislav. "Električki aktivni defekti u 4H-SiC uvedeni zračenjem." Master's thesis, University of Zagreb, Faculty of Science, 2017. https://urn.nsk.hr/urn:nbn:hr:217:888173

Brodar, Tomislav. "Električki aktivni defekti u 4H-SiC uvedeni zračenjem." Master's thesis, University of Zagreb, Faculty of Science, 2017. https://urn.nsk.hr/urn:nbn:hr:217:888173

Brodar, T. (2017). 'Električki aktivni defekti u 4H-SiC uvedeni zračenjem', Master's thesis, University of Zagreb, Faculty of Science, accessed 18 December 2024, https://urn.nsk.hr/urn:nbn:hr:217:888173

Brodar T. Električki aktivni defekti u 4H-SiC uvedeni zračenjem [Master's thesis]. Zagreb: University of Zagreb, Faculty of Science; 2017 [cited 2024 December 18] Available at: https://urn.nsk.hr/urn:nbn:hr:217:888173

T. Brodar, "Električki aktivni defekti u 4H-SiC uvedeni zračenjem", Master's thesis, University of Zagreb, Faculty of Science, Zagreb, 2017. Available at: https://urn.nsk.hr/urn:nbn:hr:217:888173

Metadata
TitleElektrički aktivni defekti u 4H-SiC uvedeni zračenjem
Title (english)Electrically active defects in 4H-SiC introduced by radiation
AuthorTomislav Brodar
MentorIvana Capan (mentor)
MentorMatko Milin (mentor)
Committee memberMatko Milin (predsjednik povjerenstva)
Committee memberIvana Capan (član povjerenstva)
Committee memberIvo Batistić (član povjerenstva)
Committee memberHrvoje Buljan (član povjerenstva)
Committee memberEmil Tafra (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Science
(Department of Physics)
Zagreb
Defense date and country2017-07-13, Croatia
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract
Ni/4H-SiC Schottky diode n-tipa ozračene su termalnim i brzim neutronima te implantirane s 2MeV He ionima. Zatim, izvršena je karakterizacija strujno-naponskim, kapacitivno-naponskim te mjerenjima tranzijentne spektroskopije dubokih nivoa. Ozračivanje termalnim neutronima u dozama do 1 x 1010 cm-2 nije uzrokovalo promjene karakteristika, što je u skladu s velikom otpornošću SiC na oštećenja pri ozračivanju. Ozračivanje brzim neutronima (pri dozi 1 x 1013 cm-2) je unijelo novi ET2 duboki nivo, dok se koncentracija Z1/2 dubokog nivoa povećala. Brzi neutroni energije oko 0.8 MeV (koji su korišteni u ovom radu) mogu unijeti samo vakancije i intersticije u SiC, stoga opaženi duboki nivoi su vezani uz njih. Kompenzacija je opažena pri dozi 1 x 1014 cm-2 brzih neutrona. Implantacija 2MeV He iona unijela je ET1, Z11/2 i ET2 duboke nivoe te uzrokovala kompenzaciju u području dosega 2MeV He iona u 4H-SiC.
Abstract (english)
N-type Ni/4H-SiC Schottky diodes were irradiated by thermal and fast neutrons and implanted with 2MeV He ions. Afterwards, characterization by current-voltage, capacitance-voltage and deep level transient spectroscopy measurements was carried out. Irradiation with thermal neutrons at fluences up to 1 x 1010 cm-2 didn’t cause change of characteristics, which is in agreement with high radiation hardness of SiC. Irradiation with fast neutrons (fluence 1 x 1013 cm-2) has introduced a new ET2 deep level, while the concentration of Z1/2 has increased. Fast neutrons with an energy around 0.8 MeV (as used in this study) can introduce only vacancies and interstitials in SiC, so observed deep levels are related to them. Compensation was observed at fluence 1 x 1014 cm-2 of fast neutrons. Implantation of 2MeV He ions introduced ET1, Z1/2 and ET2 deep levels and caused compensation in the area of reach of 2MeV He ions.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:217:888173
Study programmeTitle: Physics; specializations in: Research
Course: Research
Study programme type: university
Study level: integrated undergraduate and graduate
Academic / professional title: magistar/magistra fizike (magistar/magistra fizike)
Type of resourceText
File originBorn digital
Access conditionsOpen access
Terms of useLicence In copyright icon
Created on2017-08-01 11:18:16