Understanding of the electronic processes in amorphous organic semiconductors is still, in many aspects, incomplete. Reason lies in the complexity of the processes, which are realised through stochastic movement of localised, correlated, electric charges within a disordered medium. This thesis presents three contributions to the understanding of electron transport processes, which have been realised by use of numeric simulations. The first contribution relates to the process of electron-hole recombination in an anisotropic environment at the junction of two different organic materials. We show that the correlated motion of the electron and the hole on the heterojunction surface results in an orders of magnitude larger cross-section for the recombination process on the heterojunction, compared to the same process in an isotropic environment. Further, there is an optimal parameter range within which the recombination is conducted dominantly in the exciton channel. The second contribution is related to the problem of stationary transport in an energetic disorder in conditions far from equilibrium, when the electron ensemble displays features of a quasiequilibrium distribution at an elevated, effective temperature. We show that this temperature, for which we find an analytic expression in 1D case, describes well the energetic distribution of carriers, but not the transport properties. Local deviations from the quasiequilibrium distribution, connected with the filamentisation of the flow, are responsible for the impossibility of parametrisation of the electron mobility by an effective temperature. The third contribution answers the question: how are the features of energetic disorder reflected in the transient electric response of the organic films? We show that the long-timescale attenuation of dark current, seen in many polymer films, represents an unambiguous proof that the density of the energetically deep electronic states is not Gaussian. An exponential distribution of deep states is in accord with experimentally observed transient response.