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Scientific paper - Original scientific paper
Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation
Physical Review B, 102 (2020), 12; 125201. https://doi.org/10.1103/PhysRevB.102.125201
Rukelj, Z.; Homes, C. C.; Orlita, M.; Akrap, Ana

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Rukelj, Z., Homes, C. C., Orlita, M. & Akrap, A. (2020). Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation. Physical Review B, 102. (12). doi: 10.1103/PhysRevB.102.125201

Rukelj, Z., et al. "Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation." Physical Review B, vol. 102, no. 12, 2020. https://doi.org/10.1103/PhysRevB.102.125201

Rukelj, Z., C. C. Homes, M. Orlita and Ana Akrap. "Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation." Physical Review B 102, no. 12 (2020). https://doi.org/10.1103/PhysRevB.102.125201

Rukelj, Z., et al. (2020) 'Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation', Physical Review B, 102(12). doi: 10.1103/PhysRevB.102.125201

Rukelj Z, Homes CC, Orlita M, Akrap A. Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation. Physical Review B [Internet]. 2020 [cited 2024 November 03];102(12). doi: 10.1103/PhysRevB.102.125201

Z. Rukelj, C. C. Homes, M. Orlita and A. Akrap, "Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation", Physical Review B, vol. 102, no. 12, 2020. [Online]. Available at: https://urn.nsk.hr/urn:nbn:hr:217:289032. [Accessed: 03 November 2024]

Metadata
Title (english)Neutron Capture on the s-Process Branching Point 171Tm via Time-of-Flight and Activation
AuthorZ. Rukelj
AuthorC. C. Homes
AuthorM. Orlita
AuthorAna Akrap
Author's institutionUniversity of Zagreb
Faculty of Science
(Department of Physics)
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract (english)
Here we study the static and dynamic transport properties of a low-energy two-band model proposed previously in Martino et al. [PRL 122, 217402 (2019)], with an anisotropic in-plane linear momentum dependence and a parabolic out-of-plane dispersion. The model is extended to include a negative band gap, which leads to the emergence of a Weyl semimetal (WSM) state, as opposed to the gapped semimetal (GSM) state when the band gap is positive. We calculate and compare the zero- and finite-frequency transport properties of the GSM and WSM cases. The DC properties that are calculated for the GSM and WSM cases are Drude spectral weight, mobility, and resistivity. We determine their dependence on the Fermi energy and crystal direction. The in- and out-of-plane optical conductivities are calculated in the limit of the vanishing interband relaxation rate for both semimetals. The main common features are an ω^1/2 in-plane and ω^3/2 out-of-plane frequency dependence of the optical conductivity. We seek particular features related to the charge transport that could unambiguously point to one ground state over the other, based on the comparison with the experiment. Differences between the WSM and GSM are in principle possible only at extremely low carrier concentrations and at low temperatures.
Languageenglish
Publication typeScientific paper - Original scientific paper
Publication statusPublished
Peer reviewPeer review - international
Publication versionPublished version
Journal titlePhysical Review B
Numberingvol. 102, no. 12, 125201
p-ISSN2469-9950
e-ISSN2469-9969
DOIhttps://doi.org/10.1103/PhysRevB.102.125201
URN:NBNurn:nbn:hr:217:289032
Publication2020
Document URLhttps://link.aps.org/doi/10.1103/PhysRevB.102.125201
Type of resourceText
Access conditionsOpen access
Terms of useLicence In copyright icon
Public note© 2020 American Physical Society. Received 29 May 2020; revised 20 August 2020; accepted 27 August 2020; published 10 September 2020.
Created on2020-11-21 21:22:01