prikaz prve stranice dokumenta Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora
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master's thesis
Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. urn:nbn:hr:168:892099
Tabaković, Azra
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

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Tabaković, A. (2023). Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:892099

Tabaković, Azra. "Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. https://urn.nsk.hr/urn:nbn:hr:168:892099

Tabaković, Azra. "Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. https://urn.nsk.hr/urn:nbn:hr:168:892099

Tabaković, A. (2023). 'Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 27 December 2024, https://urn.nsk.hr/urn:nbn:hr:168:892099

Tabaković A. Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2023 [cited 2024 December 27] Available at: https://urn.nsk.hr/urn:nbn:hr:168:892099

A. Tabaković, "Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2023. Available at: https://urn.nsk.hr/urn:nbn:hr:168:892099

Metadata
TitleRačunalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora
Title (english)Computer analysis of temperature dependence of bipolar transistor characteristics
AuthorAzra Tabaković
MentorTomislav Suligoj (mentor)
Committee memberTomislav Suligoj (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberDubravko Babić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2023-06-26, Croatia
Abstract
Rad se bavi proučavanjem karakteristika bipolarnih tranzistora na niskim temperaturama. Na početku su objašnjeni najvažniji efekti koji utječu na rad bipolarnih tranzistora, kao i problematika silicijskih i silicij-germanijskih bipolarnih tranzistora na niskim temperaturama. U nastavku rada naglasak je na bipolarnom tranzistoru s horizontalnim tokom struje. Odrađena je optimizacija modela tranzistora na temperaturi 300 K kako bi rezultati simulacija odgovarali mjerenim rezultatima. Drugi dio sadrži rezultate simulacija tranzistora na nižim temperaturama (do 30 K) gdje se dodatno javlja utjecaj freeze-outa nosilaca. Rezultati odstupaju od očekivanih i model je potrebno optimirati za rad na nižim temperaturama. Moguća rješenja su korištenje drugačijih modela fizikalnih efekata u simulaciji i prilagodba profila dopinga, prvenstveno baze i emitera.
Abstract (english)
The paper shows research on the characteristics of bipolar transistors at low temperatures. At the beginning, the most important effects affecting the operation of bipolar transistors and the problems of silicon and silicon-germanium bipolar transistors at low temperatures are explained. In the continuation of the work, the emphasis is on the horizontal current bipolar transistor. The simulation model of the transistor was optimized at a temperature of 300 K in order to match the simulation results with the measurements. The second part contains the results of transistor simulations at lower temperatures (up to 30 K), where the influence of carrier freeze-out appears. The results deviate from the expected and the model needs to be optimized for operation at lower temperatures. Possible solutions are the use of different models of physical effects in the simulation and adjustment of doping profiles, primarily base and emitter.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:892099
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2023-07-13 10:36:51