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master's thesis
Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. urn:nbn:hr:168:347629
Karač, Marija
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

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Karač, M. (2015). Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:347629

Karač, Marija. "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. https://urn.nsk.hr/urn:nbn:hr:168:347629

Karač, Marija. "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. https://urn.nsk.hr/urn:nbn:hr:168:347629

Karač, M. (2015). 'Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 19 December 2024, https://urn.nsk.hr/urn:nbn:hr:168:347629

Karač M. Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2015 [cited 2024 December 19] Available at: https://urn.nsk.hr/urn:nbn:hr:168:347629

M. Karač, "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2015. Available at: https://urn.nsk.hr/urn:nbn:hr:168:347629

Metadata
TitleMikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja
Title (english)Microwave amplifier with AlGaN/GaN field-effect transistor
AuthorMarija Karač
MentorDubravko Babić (mentor)
Committee memberDubravko Babić (predsjednik povjerenstva)
Committee memberZvonimir Šipuš (član povjerenstva)
Committee memberMarko Bosiljevac (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2015-07-01, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Ovaj rad opisuje dizajn i izradu uskopojasnog jednostupanjskog RF pojačala snage, koje radi u klasi AB, na 2 GHz. Korišten je AlGaN/GaN HEMT s visokom pokretljivošću elektrona. Opisan je proračun mreža za ugađanje ulazne i izlazne impedancije, proces izrade tiskane pločice te mjerenja i ugađanja pasivnih komponenti da bi se dobili rezultati na 2GHz.
Abstract (english)
This work describes design and production of narrowband single stage RF power amplifier, operating in class AB, with working frequency of 2GHz. For active element is chosen AlGaN/GaN HEMT, which contains high mobility electrons. In detail is described estimation of input and output matching networks, process of manufacturing PCB (printed circuit board), measuring and tuning of passive elements, in order to get results on 2 GHz.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:347629
Study programmeTitle: Information and Communication Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka informacijske i komunikacijske tehnologije (magistar/magistra inženjer/inženjerka informacijske i komunikacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2018-02-06 09:35:09