prikaz prve stranice dokumenta Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida
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master's thesis
Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. urn:nbn:hr:168:772006
Prevarić, Ivan
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

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Prevarić, I. (2023). Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:772006

Prevarić, Ivan. "Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. https://urn.nsk.hr/urn:nbn:hr:168:772006

Prevarić, Ivan. "Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2023. https://urn.nsk.hr/urn:nbn:hr:168:772006

Prevarić, I. (2023). 'Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 17 February 2025, https://urn.nsk.hr/urn:nbn:hr:168:772006

Prevarić I. Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2023 [cited 2025 February 17] Available at: https://urn.nsk.hr/urn:nbn:hr:168:772006

I. Prevarić, "Analiza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2023. Available at: https://urn.nsk.hr/urn:nbn:hr:168:772006

Metadata
TitleAnaliza performansi FET-ova temeljenih na nanovrpcama monosloja molibden-disulfida
Title (english)Performance analysis of FETs based on monolayer molybdenum disulfide nanoribbons
AuthorIvan Prevarić
MentorMirko Poljak (mentor)
Committee memberMirko Poljak (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberVladimir Čeperić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2023-07-04, Croatia
Abstract
U ovom radu, koristeći ab initio Hamiltonijane i kvantni transport temeljen na Greenovim funkcijama van ekvilibrija, opisane su MoS2-NR FET-ovi. Pomoću hamiltonijana izračunata je kompleksna struktura energijskih vrpci te je ekstrahirana atenuacija unutar zabranjenog pojasa. Otprije implementiranom simulatoru TOB modela priključen je UTB model koji proračun struja curenja radi na temelju ekstrahiranih atenuacijskih karakteristika. Usporedbom rezultata pri korištenju ekstrahirane i parabolom aproksimirane atenuacije zaključeno je da aproksimirana atenuacija značajno precjenjuje tuneliranje te da nije pogodna za korištenje za MoS2-NR. Pokazano je da MoS2-NR FET-ovi imaju dovoljno jaku atenuaciju tuneliranja za sve duljine kanala. Maksimalna ukupna struja curenja za najkraći kanal bila je 16.5 nA/μm kod nFET-ova, te 22 nA/μm kod pFET-ova.
Abstract (english)
In this work we used the ab initio Hamiltonians and quantum transport simulations based on Green’s functions to construct MoS2-NR FETs. Hamiltonians were used to calculate the complex bandstructure and attenuation in the forbidden region was extracted. Alongside before implemented TOB model, UTB model was used to calculate the total OFF state current based on extracted attenuation characteristics. By comparing the results we find that approximation significantly overestimates tunnelling and that it is not adequate for use in MoS2-NRs. It was shown that MoS2-NR FETs have strong attenuation of tunneling for all channel lengths. Maximum current obtained for shortest channel was 16.5 nA/μm for nFETs and 22 nA/μm for pFETs.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:772006
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2023-10-11 10:13:44