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master's thesis
Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2014. urn:nbn:hr:168:279084
Krivec, Sabina
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

Cite this document

Krivec, S. (2014). Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:279084

Krivec, Sabina. "Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2014. https://urn.nsk.hr/urn:nbn:hr:168:279084

Krivec, Sabina. "Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2014. https://urn.nsk.hr/urn:nbn:hr:168:279084

Krivec, S. (2014). 'Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 23 November 2024, https://urn.nsk.hr/urn:nbn:hr:168:279084

Krivec S. Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2014 [cited 2024 November 23] Available at: https://urn.nsk.hr/urn:nbn:hr:168:279084

S. Krivec, "Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2014. Available at: https://urn.nsk.hr/urn:nbn:hr:168:279084

Metadata
TitleModeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja
Title (english)Modeling of electron transport in Gallium-nitride Field Effect Transistors
AuthorSabina Krivec
MentorTomislav Suligoj (mentor)
Committee memberTomislav Suligoj (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberMirko Poljak (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2014-07-11, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Cilj ovog rada je razvoj modela transporta nosilaca u GaN sloju MOS strukture s vrlo tankim tijelom te analiza promjene pokretljivosti pri niskim iznosima lateralnog polja s obzirom na skaliranje debljine GaN sloja i promjenu napona na upravljačkim elektrodama u slučajevima DG i SG strukture. Obavljen je poluklasični proračun pokretljivosti nosilaca u dvodimenzionalnom elektronskom plinu temeljen na Fermijevom zlatnom pravilu i aproksimaciji vremena relaksacije momenta. Uzimajući u obzir relevantne mehanizme raspršenja nosilaca te analizom pojedinog mehanizma raspršenja na transport nosilaca unutar GaN sloja zaključeno je da najveći utjecaj na pokretljivost pri malim iznosima električnog polja ima raspršenje na Coulombovim centrima, dok pri većim iznosima el. polja dominantan utjecaj na pokretljivost ima raspršenje na međupovršinama. Usporedbom pokretljivosti za slučajeve DG i SG strukture zaključeno je da je pokretljivost u slučaju DG strukture veća od SG strukture, što je pogotovo istaknuto za debljine tijela od 3 do 10 nm, gdje se u slučaju DG strukture javljaju maksimumi pokretljivosti kao posljedica inverzija volumena pri srednjim iznosima napona upravljačke elektrode.
Abstract (english)
In this thesis, the modeling of electron transport in GaN UTB structure and the analysis of low field mobility considering the scaling of body thickness and application of different gate voltages for DG and SG structure is reported. For transport calculation a semi-classical approach was used based on Fermi golden rule and momentum relaxation time approximation. Scattering mechanisms that were included in the analysis were: acoustic (AP) and polar optical (POP) phonon scattering, surface roughness (SR) scattering and Coulomb scattering on impurities and interface charge (CO). It was concluded that CO scattering exhibits the strongest influence on the mobility at low gate voltages, while SR scattering degrades mobility at higher gate voltages. Comparison of the transport properties of DG and SG structures has shown that DG architecture offers higher mobility values for body thicknesses between 3 nm and 10 nm due to the volume inversion at moderate gate voltages.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:279084
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2018-02-06 09:55:01