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doctoral thesis
Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2024. urn:nbn:hr:168:072309
Matić, Mislav
University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems

Institutional repository: FER Repository

Cite this document

Matić, M. (2024). Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials (Doctoral thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:072309

Matić, Mislav. "Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2024. https://urn.nsk.hr/urn:nbn:hr:168:072309

Matić, Mislav. "Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2024. https://urn.nsk.hr/urn:nbn:hr:168:072309

Matić, M. (2024). 'Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 01 April 2025, https://urn.nsk.hr/urn:nbn:hr:168:072309

Matić M. Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2024 [cited 2025 April 01] Available at: https://urn.nsk.hr/urn:nbn:hr:168:072309

M. Matić, "Quantum-transport analysis of transistors based on nanoribbons of novel 2D materials", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2024. Available at: https://urn.nsk.hr/urn:nbn:hr:168:072309

Metadata
TitleQuantum-transport analysis of transistors based on nanoribbons of novel 2D materials
Title (croatian)Kvantnotransportna analiza tranzistora temeljenih na nanovrpcama novih 2D materijala
AuthorMislav Matić
MentorMirko Poljak (mentor)
Committee memberMarko Koričić (predsjednik povjerenstva)
Committee memberTomislav Marković (član povjerenstva)
Committee memberIvor Lončarić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
(Department of Electronics, Microelectronics, Computer and Intelligent Systems)
Zagreb
Defense date and country2024-10-25, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Universal decimal classification
(UDC)		621.3 - Electrical engineering
Abstract
The development and optimization of future logic electron devices strongly relies on novel materials and device architectures. One of the most promising research paths is presented by 2D materials patterned into quasi-one-dimensional (1D) nanostructures known as nanoribbons. The aim of this dissertation was to develop an ab initio quantum transport method to assess the potential of quasi-1D materials for future extremely-scaled field-effect transistors (FETs). The investigated materials include... More armchair (AC) and zigzag (ZZ) nanoribbons of MX2-enes (MX2NRs) with M = {Hf, Zr} and X = {S, Se}, AC and ZZ nanoribbons of monolayer germanium sulfide (GeSNRs), as well as nanoribbons of monolayer molybdenum disulfide (MoS2NRs). The ab initio quantum transport study is performed using density functional theory (DFT) and maximally localized Wannier functions (MLWFs) to obtain the electronic structure and device Hamiltonians. The obtained atomistic Hamiltonians are coupled with the non-equilibrium Green’s function (NEGF) formalism-based numerical solver for quantum transport simulations of FETs. The thesis investigated the performance of nanoribbon FETs in detail and supported the findings by examining the electronic and transport properties of these nanostructures. The results showed that nanostructured Hf- and Zr-based MX2-enes and GeS present a promising platform for future ultra-scaled high-performance logic devices. Less
Abstract (croatian)
Razvoj i optimizacija logičkih elektroničkih elemenata oslanja se na nove materijale i arhitekture elemenata. Jedan od najperspektivnijih pravaca istraživanja novih elemenata je primjena 2D materijala oblikovanih u kvazi-jednodimenzionalne (kvazi-1D) nanostrukture, nazvane nanovrpcama. Cilj ove doktorske disertacije bio je razviti metodu temeljenu na ab initio kvantnotransportnom izračunu kako bi se istražio potencijal kvazi-1D materijala za ekstremno skalirane tranzistore s efektom polja... More (engl. field-effect transistor, FET). Materijali čiji se potencijal istraživao uključuju armchair (AC) i zigzag (ZZ) nanovrpce MX2-ena (MX2NR) s M = {Hf, Zr} i X = {S, Se}, AC i ZZ nanovrpce germanij-sulfida (GeSNR), kao i nanovrpce molibden-disulfida (MoS2NR). Ab initio kvantnotransportne simulacije izvedene su korištenjem teorije funkcionala gustoće (DFT) i maksimalno lokaliziranih Wannierovih funkcija (MLWF) za dobivanje elektronske strukture i hamiltonijana nanovrpci. Dobiveni hamiltonijani povezani su sa numeričkim simulatorom kvantnog transporta koji se temelji na formalizmu Greenove funkcije izvan ravnoteže (NEGF) za simulaciju FET-ova. U disertaciji su detaljno istražene performanse FET-ova temeljenih na nanovrpcama, a dobiveni rezultati su objašnjeni analizom elektronskih i transportnih svojstva istraživanih nanostruktura. Rezultati istraživanja pokazuju da su nanostrukturirani GeS te MX2-eni temeljeni na hafniju i cirkoniju materijali s obećavajućim svojstvima za buduće ultra-skalirane logičke elemente visokih performansi. Less
Keywords
Keywords (croatian)
Languageenglish
URN:NBNurn:nbn:hr:168:072309
Promotion2025
Study programmeTitle: Doctoral study programme "Electrical Engineering and Computing"
Study programme type: university
Study level: postgraduate
Academic / professional title: doktor/doktorica znanosti, po-dručje tehničkih znanosti (doktor/doktorica znanosti, po-dručje tehničkih znanosti)
Type of resourceText
Extent119 str.
File originBorn digital
Access conditionsOpen access
Terms of useLicence In copyright icon
Created on2025-01-29 12:39:35
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