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master's thesis
Visokoprecizno pojačalo za neizbrisive memorije
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. urn:nbn:hr:168:632054
Tolić, Ivan Porin
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

Cite this document

Tolić, I. P. (2018). Visokoprecizno pojačalo za neizbrisive memorije (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:632054

Tolić, Ivan Porin. "Visokoprecizno pojačalo za neizbrisive memorije." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:632054

Tolić, Ivan Porin. "Visokoprecizno pojačalo za neizbrisive memorije." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:632054

Tolić, I. P. (2018). 'Visokoprecizno pojačalo za neizbrisive memorije', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 28 August 2024, https://urn.nsk.hr/urn:nbn:hr:168:632054

Tolić IP. Visokoprecizno pojačalo za neizbrisive memorije [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2018 [cited 2024 August 28] Available at: https://urn.nsk.hr/urn:nbn:hr:168:632054

I. P. Tolić, "Visokoprecizno pojačalo za neizbrisive memorije", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:168:632054

Metadata
TitleVisokoprecizno pojačalo za neizbrisive memorije
Title (english)High Precision Sense Amplifier for Non-Volatile Memory
AuthorIvan Porin Tolić
MentorAdrijan Barić (mentor)
Committee memberAdrijan Barić (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberVladimir Čeperić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2018-09-27, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Neizbrisive memorije koriste se u prijenosnim uređajima, ugradbenim sustavima, u memoriji za pohranu parametara za digitalnu obradu signala itd. Kako bi memorija bila korisna, potreban je parametar/svojstvo s barem dva stanja. U slučaju neizbrisivih memorija, dva logička stanja, '0' i '1', ostvarena su elementima baziranim na pohranjivanju naboja. Točnije, naboj je "zarobljen" u specifičnom dijelu tranzistora čime se mijenja određeno svojstvo elementa (tj. napon praga). Na taj način prisutstvo ili odsutstvo naboja se može detektirati. Dakle, osjetilna pojačala potrebna su za detekciju stanja memorijskih elemenata. S diferencijalnim ćelijama, dva tranzistora koriste se za jedan bit. Jedna od ćelija je programirana (naboj je "zarobljen"), dok druga je obrisana (bez naboja u plivajućoj upravljačkoj elektrodi). Dvije struje iz ćelija ulazi su osjetilnog pojačala. Glavni zadatak osjetilnog pojačala je osjetiti razilku između dviju ulaznih struja i postaviti izlazne napone na ispravne vrijednosti. Tehnologija korištena za dizajn je TSMC 180 nm. Uz različite pristupe projektiranja krugova, dobiveni su različiti rezultati u smislu brzine, površine i preciznosti.
Abstract (english)
Non-volatile memories (NVM-s) are used in portable devices, embedded systems, in memory for storing DSP parameters etc. To have usable memory, it is required to have a detectable parameter/property with at least two states. In case of NVM, the two logic states, ’0’ and ’1’, are realized with charge-based memory devices. More precisely, the charge is "trapped" in the specific region of the transistor thus changing some property of the device (e.g. threshold voltage). This way the presence or the absence of the charges is to be sensed. Therefore, sense amplifiers are needed for detecting the states of memory devices. With the differential cells, two transistor are used for one bit. One of the cells is programmed (the charge is "trapped"), while the other is erased (without charges in the floating gate). Two currents from cells are inputs to the sense amplifier. The main task of the sense amplifier is to sense the difference between two input currents and to set the output voltages to correct values. The technology used for the design was TSMC 180 nm. Using different circuit designs, different results interms of speed, area and precision were achieved.
Keywords
Keywords (english)
Languageenglish
URN:NBNurn:nbn:hr:168:632054
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2019-03-14 01:33:59