prikaz prve stranice dokumenta Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona
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master's thesis
Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2019. urn:nbn:hr:168:599625
Petrina, Tina
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

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Petrina, T. (2019). Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:599625

Petrina, Tina. "Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2019. https://urn.nsk.hr/urn:nbn:hr:168:599625

Petrina, Tina. "Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2019. https://urn.nsk.hr/urn:nbn:hr:168:599625

Petrina, T. (2019). 'Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 03 November 2024, https://urn.nsk.hr/urn:nbn:hr:168:599625

Petrina T. Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2019 [cited 2024 November 03] Available at: https://urn.nsk.hr/urn:nbn:hr:168:599625

T. Petrina, "Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2019. Available at: https://urn.nsk.hr/urn:nbn:hr:168:599625

Metadata
TitleModeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona
Title (english)Modeling of electrostatics and carrier transport in galium-nitride high electron mobility transistors
AuthorTina Petrina
MentorTomislav Suligoj (mentor)
Committee memberTomislav Suligoj (predsjednik povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
Committee memberMirko Poljak (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2019-07-17, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
U ovom diplomskom radu naglasak je bio stavljen na strukturu tranzistora s visokom pokretljivosti elektrona kao sve upotrebljivijem poluvodičkom elementu u visokofrekvencijskoj elektronici zadnjih godina. U prvom dijelu rada objasnila se fizika same strukture - kako nastaje AlGaN/GaN heterospoj, zašto dolazi do stvaranja kvantne jame i dvodimenzionalnog elektronskog plina i sl. Potom su se objasnili različiti mehanizmi raspršenja koji će se kasnije analizirati u radu. U idućem, drugom, dijelu rada napisane su sve korištene formule i konstante kao i kratke upute kroz kodove koji su se koristili za Schrödinger-Poissonov samokonzistentni simulator i za utjecaje različitih mehanizama raspršenja na pokretljivost elektrona zadane strukture. U zadnjem dijelu radu prikazali su se i objasnili rezultati gore navedenih simulacija. U Schrödinger-Poisson samokonzistentnom simulatoru prikazani su promjena kvantne jame, koncentracije nosilaca i energetskih razina s obzirom na promjenu napona na upravljačkoj elektrodi za single - gate strukturu i promjenu koncentracije aluminija u Al(x)Ga(1-x)N spoju sa sto na trideset posto.
Abstract (english)
In this thesis focus was put on a structure of high electron mobility transistor as recently more used electronic device in high frequency electronics. In first part of thesis, the physics of structure was described - how AlGaN/GaN heterojunction is made, why it comes to creating of the quantum well and two dimensional electron gas, etc... Then are written different scattering mechanisms which will be later used in analyses. In next, second part of thesis, all used and later discussed formulas, constants as well as short descriptions through program codes of Schrödinger-Poisson's self-consistent simulator and influence of scattering mechanisms on electron mobility are mentioned. In last part of thesis, the results of above mentioned simulations are showed and analysed. In Schrödinger-Poisson's self-consistent simulator, change of quantum well, carrier concentration and energy levels are showed according to gate voltage change for a single gate structure as well as aluminium concentration change from a hundred to thirty percent in Al(x)Ga(1-x)N compound.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:599625
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2020-01-07 21:18:45