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doctoral thesis
Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. urn:nbn:hr:168:500449
Sviličić, Boris
University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems

Institutional repository: FER Repository

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Sviličić, B. (2008). Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu (Doctoral thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:500449

Sviličić, Boris. "Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. https://urn.nsk.hr/urn:nbn:hr:168:500449

Sviličić, Boris. "Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2008. https://urn.nsk.hr/urn:nbn:hr:168:500449

Sviličić, B. (2008). 'Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 28 December 2024, https://urn.nsk.hr/urn:nbn:hr:168:500449

Sviličić B. Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2008 [cited 2024 December 28] Available at: https://urn.nsk.hr/urn:nbn:hr:168:500449

B. Sviličić, "Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2008. Available at: https://urn.nsk.hr/urn:nbn:hr:168:500449

Metadata
TitleModeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji silicija ni na čemu
Title (english)Modelling and optimization of the vertical fully-depleted silicon-on-nothing MOSFET
AuthorBoris Sviličić
MentorPetar Biljanović (mentor)
MentorSlavko Amon (komentor)
VIAF: 306151014
Committee memberTomislav Suligoj (član povjerenstva)
Committee memberPetar Biljanović (član povjerenstva)
Committee memberSlavko Amon (član povjerenstva)
VIAF: 306151014
Committee memberMile Ivanda (član povjerenstva)
Committee memberJulijana Divković-Pukšec (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
(Department of Electronics, Microelectronics, Computer and Intelligent Systems)
Zagreb
Defense date and country2008-05-14, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Electronics
Universal decimal classification
(UDC)		621.3 - Electrical engineering
Abstract
Kapacitivno-naponske karakteristike VFD SONFET strukture modelirane su u svim područjima rada - akumulaciji, osiromašenju i inverziji. Kompaktni i 2D modeli kritičnih parametara VFD SONFET strukture u području ispod napona praga su razvijeni. Provjera ispravnosti analitičkih modela provedena je usporedbama s Medici simulacijama na velikom broju različitih tranzistorskih struktura. Optimizacija VFD SONFET strukture provedena je na temelju detaljne analize utjecaja tehnoloških parametara. Za strukture dugog i kratkog kanala uspoređeni su kompaktni modeli s 2D modelima, te su analizirana ograničena pojedinih modela. Kompaktni model lateralne SONFET strukture uspoređen je s modelom VFD SONFET strukture te su istaknute prednosti vertikalne strukture.
Abstract (english)
The capacitance-voltage characteristics of the VFD SONFET are modeled in all operating conditions - accumulation, depletion and inversion. The VFD SONFET compact and 2D models for the critical subthreshold parameters are developed. The accuracy of the analytical models is verified by comparison to the numerical device simulator Medici, over a wide range of different device structures. Optimization of structure conducted on the basis of the detailed analysis of the technological parameters' influence. Compact and 2D models for the long channel and short channel structures are compared. The lateral SONFET compact model is compared to a VFD SONFET, and the advantages of vertical structures are pointed out.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:500449
Study programmeTitle: Doctoral study programme "Electrical Engineering and Computing"
Study programme type: university
Study level: postgraduate
Academic / professional title: doktor/doktorica znanosti, po-dručje tehničkih znanosti (doktor/doktorica znanosti, po-dručje tehničkih znanosti)
Type of resourceText
File originBorn digital
Access conditionsClosed access
Terms of useLicence In copyright icon
Created on2020-05-16 09:53:33