prikaz prve stranice dokumenta Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora
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master's thesis
Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. urn:nbn:hr:168:912413
Marković, Lovro
University of Zagreb
Faculty of Electrical Engineering and Computing

Institutional repository: FER Repository

Cite this document

Marković, L. (2020). Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:912413

Marković, Lovro. "Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. https://urn.nsk.hr/urn:nbn:hr:168:912413

Marković, Lovro. "Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2020. https://urn.nsk.hr/urn:nbn:hr:168:912413

Marković, L. (2020). 'Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 23 November 2024, https://urn.nsk.hr/urn:nbn:hr:168:912413

Marković L. Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2020 [cited 2024 November 23] Available at: https://urn.nsk.hr/urn:nbn:hr:168:912413

L. Marković, "Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2020. Available at: https://urn.nsk.hr/urn:nbn:hr:168:912413

Metadata
TitleOptimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora
Title (english)Optimization of germanium fotodetector structures with an amorphous boron layer
AuthorLovro Marković
MentorMirko Poljak (mentor)
Committee memberMirko Poljak (predsjednik povjerenstva)
Committee memberTomislav Suligoj (član povjerenstva)
Committee memberMarko Koričić (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Electrical Engineering and Computing
Zagreb
Defense date and country2020-02-11, Croatia
Scientific / art field,
discipline and subdiscipline		TECHNICAL SCIENCES
Electrical Engineering
Abstract
Rad donosi analizu postojećih poluvodičkih tehnologija detekcije čestica i elektromagnetskog zračenja. Analizirane su karakteristike materijala pogodne za izgradnju specifičnih detektora (UV, IR, elektroni). Također, ispitane su i modelirane potencijalne barijere na granici metal/poluvodič te na heterospoju poluvodiča u TCAD simulacijskom softveru. Djelomično su okarakterizirana svojstva nanometarskog sloja amorfnog bora. Izgrađeni su 1D i 2D modeli diode s nanometarskim slojem amorfnog bora na površini (PureB) na siliciju i germaniju te je načinjena usporedba električkih karakteristika s karakteristikom silicijske/germanijske diode s dubokim i plitkim p+/n spojem. Formiranje graničnog sloja šupljina i potencijalne barijere na heterospojevima predloženi su kao moguće objašnjenje niskih iznosa gustoća struja zasićenja.
Abstract (english)
Analysis of existing semiconductor detectors for particle and light detection was made. Properties of different materials relevant for specific purposes (IR, UV, electrons) were described. Physical models of metal-semiconductor and hetero-interfaces were explained and used for modeling of its electrical characteristics using TCAD simulation software. Properties of a few nanometers thin layer of amorphous boron were explained. Construction of 1D and 2D models of ultra-shallow junction diode on Si/Ge with amorphous boron surface layer was performed in order to make a comparison of PureB diodes' electrical characteristics with those of deep and shallow junction Si/Ge p+/n diodes. Formation of an interface hole layer (IHL) on heterojunction and heterojunction potential barriers were proposed as a possible explanation of low values of saturation current densities.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:168:912413
Study programmeTitle: Electrical Engineering and Information Technology
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
Type of resourceText
File originBorn digital
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Created on2023-01-13 10:20:50