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master's thesis
Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors
Zagreb: University of Zagreb, Faculty of Science, 2018. urn:nbn:hr:217:370582
Petrinec, Ana
University of Zagreb
Faculty of Science
Department of Physics

Institutional repository: Repository of the Faculty of Science

Cite this document

Petrinec, A. (2018). Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors (Master's thesis). Zagreb: University of Zagreb, Faculty of Science. Retrieved from https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, Ana. "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors." Master's thesis, University of Zagreb, Faculty of Science, 2018. https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, Ana. "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors." Master's thesis, University of Zagreb, Faculty of Science, 2018. https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, A. (2018). 'Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors', Master's thesis, University of Zagreb, Faculty of Science, accessed 01 January 2025, https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec A. Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors [Master's thesis]. Zagreb: University of Zagreb, Faculty of Science; 2018 [cited 2025 January 01] Available at: https://urn.nsk.hr/urn:nbn:hr:217:370582

A. Petrinec, "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors", Master's thesis, University of Zagreb, Faculty of Science, Zagreb, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:217:370582

Metadata
TitleTransient current technique (TCT) characterization of high-energy photon irradiated silicon detectors
Title (croatian)Karakterizacija silicijskih detektora ozračenih visokoenergetskim fotonima metodom tranzijentne struje (TCT)
AuthorAna Petrinec
MentorJaakko Juhana Harkonen (mentor)
MentorMihael Makek (mentor)
Committee memberMihael Makek (predsjednik povjerenstva)
Committee memberJaakko Juhana Harkonen (član povjerenstva)
Committee memberNils Paar (član povjerenstva)
Committee memberDamir Bosnar (član povjerenstva)
Committee memberTomislav Marketin (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Science
(Department of Physics)
Zagreb
Defense date and country2018-08-28, Croatia
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract
Incident radiation delivers energy to matter through different interactions. This can disrupt regular crystal structure of a semiconductor detector, which degrades its properties. The purpose of this thesis is to study the effect of gamma radiation on the properties of silicon detectors. Samples used are n- and p-type diodes made of Czochralski silicon. They were produced in Finnish Center for Micro- and Nanotechnology Micronova. Transient Current Technique (TCT) with red and infrared laser (wavelengths 660 and 1064 nm) is used to characterize the detectors. From recorded transients the information can be obtained about collected charge, full depletion voltage, electric field distribution and sign of the space charge, to name a few. With increasing radiation dose, detector may experience charge loss, full depletion voltage changes and an increase in the leakage current. For maximum dose at which detectors were irradiated (187 kGy), the only observable effect was increase of the leakage current. N-type detectors proved to be more resilient to gamma irradiation than p-type one.
Abstract (croatian)
Kroz različite interakcije upadno zračenje materiji predaje energiju. To može oštetiti pravilnu kristalnu strukturu čime se narušavaju svojstva poluvodičkog detektora. Svrha je ovog rada proučavanje utjecaja ozračivanja visokoenergijskim gama zrakama na svojstva silicijskih detektora. Korišteni uzorci su diode n- i p-tipa napravljene od Czochralskog silicija u finskom centru za mikro- i nanotehnologiju Micronova. Za karakterizaciju detektora korištena je metoda tranzijentne struje (TCT) s crvenim i infracrvenim laserom (valnih duljina 660 i 1064 nm). Iz dobivenih signala mogu se, me-du ostalim, dobiti informacije o prikupljenom naboju, radnom naponu, raspodjeli električnog polja unutar volumena detektora i predznaku prostornog naboja u zoni osiromašenja. S porastom primljene doze zračenja detektoru se mijenja napon potpunog osiromašenja, gubi naboj te dolazi do porasta struje kroz detektor u nepropusnoj polarizaciji. Na maksimalnoj dozi kojom su detektori ozračeni (187 kGy) jedina sa sigurnošću uočena posljedica bila je porast struje u nepropusnoj polarizaciji. Detektori n-tipa pokazali su se otpornijima na gama zračenje od detektora p-tipa.
Keywords
Keywords (croatian)
Languageenglish
URN:NBNurn:nbn:hr:217:370582
Study programmeTitle: Physics; specializations in: Research
Course: Research
Study programme type: university
Study level: integrated undergraduate and graduate
Academic / professional title: magistar/magistra fizike (magistar/magistra fizike)
Type of resourceText
File originBorn digital
Access conditionsOpen access
Terms of useLicence In copyright icon
Created on2018-11-20 16:35:34