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master's thesis
Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom
Zagreb: University of Zagreb, Faculty of Science, 2020. urn:nbn:hr:217:618156
Bakrač, Luka
University of Zagreb
Faculty of Science
Department of Physics

Institutional repository: Repository of the Faculty of Science

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Bakrač, L. (2020). Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom (Master's thesis). Zagreb: University of Zagreb, Faculty of Science. Retrieved from https://urn.nsk.hr/urn:nbn:hr:217:618156

Bakrač, Luka. "Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom." Master's thesis, University of Zagreb, Faculty of Science, 2020. https://urn.nsk.hr/urn:nbn:hr:217:618156

Bakrač, Luka. "Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom." Master's thesis, University of Zagreb, Faculty of Science, 2020. https://urn.nsk.hr/urn:nbn:hr:217:618156

Bakrač, L. (2020). 'Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom', Master's thesis, University of Zagreb, Faculty of Science, accessed 14 May 2024, https://urn.nsk.hr/urn:nbn:hr:217:618156

Bakrač L. Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom [Master's thesis]. Zagreb: University of Zagreb, Faculty of Science; 2020 [cited 2024 May 14] Available at: https://urn.nsk.hr/urn:nbn:hr:217:618156

L. Bakrač, "Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom", Master's thesis, University of Zagreb, Faculty of Science, Zagreb, 2020. Available at: https://urn.nsk.hr/urn:nbn:hr:217:618156

Metadata
TitleKapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom
Title (english)Capacitance transient spectroscopy study of defects introduced by ion implantation
AuthorLuka Bakrač
MentorIvana Capan (mentor)
MentorIvan Kokanović (komentor)
Committee memberIvan Kokanović (predsjednik povjerenstva)
Committee memberIvana Capan (član povjerenstva)
Committee memberIvica Smolić (član povjerenstva)
Committee memberEmil Tafra (član povjerenstva)
Committee memberHrvoje Buljan (član povjerenstva)
GranterUniversity of Zagreb
Faculty of Science
(Department of Physics)
Zagreb
Defense date and country2020-09-30, Croatia
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract
U ovom radu proučena je otpornost silicij karbida na uvođenje defekata ozračivanjem ionima. Za karakterizaciju su korištene Schottky diode napravljene na n-tipu 4H politipa silicij karbida (4H-SiC). Diode su karakterizirane strujno-naponskim i kapacitivno-naponskim mjerenjima, a duboki nivoi karakterizirani su tranzijentnom spektroskopijom dubokih nivoa (DLTS). Proučen je utjecaj ozračivanja dioda ionima helija, ugljika i kisika različitih doza i energija. Kod svih proučenih doza i vrsta iona nisu zapažene promjene strujno-naponske karakteristike, dok kapacitivno-naponske karakteristike pokazuju kompenzaciju slobodnih nosioca naboja uzrokovanu uvođenjem dubokih nivoa. Kod svih dioda uočen je duboki nivo Z1/2 koji odgovara defektu vakancije ugljika što znači da je prisutan i prije ozračivanja. Ozračivanjem je uočena pojava dva dodatna duboka nivoa EH1 i EH3 koji odgovaraju različitim prijelazima stanja defekta vakancije silicija.
Abstract (english)
This work presents the influence of ion radiation on the introduction of defects in silicon carbide. Schottky diodes made on n-type 4H polytype silicon carbide (4H-SiC) were used for the characterization. Diodes were characterized by current-voltage and capacitance voltage measurements. Deep levels were characterized by deep level transient spectroscopy (DLTS). The influence of irradiation of diodes with helium, carbon, and oxygen ions of different doses and energies was studied. No changes in current-voltage characteristics were observed at all studied doses and ion types, while capacitance-voltage characteristics showed compensation of free charge carriers caused by the introduction of deep levels. In all diodes, a deep level Z1/2 was observed, which corresponds to the defect of carbon vacancy, which means that it is present even before irradiation. Irradiation introduced two additional deep levels - EH1 and EH3 corresponding to different state transitions of the silicon vacancy defect.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:217:618156
Study programmeTitle: Physics; specializations in: Research
Course: Research
Study programme type: university
Study level: integrated undergraduate and graduate
Academic / professional title: magistar/magistra fizike (magistar/magistra fizike)
Type of resourceText
File originBorn digital
Access conditionsOpen access
Terms of useLicence In copyright icon
Created on2021-01-19 08:33:16