In this thesis, we are analyzing and optimizing the characteristics of a silicon drift detector (SDD), as first presented by Gatti and Rehak in 1983. SDD is a semiconductor photodetector used for energy and position detection of X-ray radiation and ionizing particles. Its working principle is based on the lateral gradient of electric potential, created by cathode power supply and geometry manipulation, which pushes electrons towards the anode. By having only one anode, the capacitance value is limited, which reduces the signal collection time and thus the amount of noise added, resulting in lower cooling requirements. After explaining the defining parameters of an SDD, we used a numerical simulator to optimize a basic two-dimensional structure to obtain the best electrostatic properties. Then we observed the transient properties of the improved structure by radiating it in different positions and tracking the electric current response of the anode. Since these types of detectors are susceptible to radiation damage, different types and amounts of defects were added to the silicon bulk, as well as the surface of the detector to determine their effects on SDD's performance. At the end, different solutions were considered to improve the radiation hardness of the detector.