The well-established phenomenon of negative electrical capacitance offers a method to enhance transistor efficiency. However, it initially manifests as an unstable state near the phase transition-the boundary between paraelectric and ferroelectric states. This instability leads to hysteresis, or the inertia in rotating the spontaneous polarization of the ferroelectric, which has hindered its practical application in high-frequency electronic devices. This study builds upon previous efforts to stabilize the negative capacitance region of the ferroelectric layer. It explores dielectric layers that are incorporated into a known heterostructure, leveraging the ferroelectric’s tendency to form Kittel domain layers. For a system where the field-direction polarization domain grows at the expense of the oppositely-oriented domain, we calculated the electric permittivity function and the conditions for achieving negative capacitance. We also presented a simplified dynamic regime model, describing the domains and external field as a forced harmonic oscillator. This approach aimed to determine the range of external field operating frequencies that allow stable system oscillation. We investigated the feasibility of generating a stable limit cycle through Hopf bifurcation-specifically, a self-sustaining oscillator devoid of external excitation-within an RLC circuit incorporating an element exhibiting negative capacitance. The analysis concludes by presenting the model’s limitations and potential improvements.