Irradiating semiconductor material with fast ions creates defects in crystal lattice, namely vacancies and interstitials. The highest defect concentration is observed near the end of the range of high energy ions in the material. Within these localized volumes, where defect concentration is increased, defect recombination or complex defects formation is possible. Initial recombination cascades, which occur during the first picosecond time frames, are well studied. But, processes that are responsible for reducing the number of defects, produced during ionizing radiation of semiconductors, during longer time scales, are not so clarified, so these were the main subject of our study. Two detector materials were examined: Si PIN diodes and 4H-SiC Schottky diodes. Detectors were irradiated using ion beams of different properties. In order to study the influence of the created electrically active defects on the charge carrier’s mobility, IBIC method was utilized. For silicon, significant defect annealing was observed (at room temperature conditions) on time scales of one day, while no such effect was recorded in SiC due to the wide band-gap in this material. By using a pulsed ion beam, we tried to study defect recombination in the millisecond time frames. Recombinations which occur during pulsed beam pauses have not produced a statistically significant influence on the charge collection efficiency, probably because the density of the created damage events was insufficient. Also, for SiC detector, effect of the temperature on defect mobility (induced by locally damaging ions) was investigated. Results have been interpreted based on existing DLTS measurements, which have been used to characterize energy levels in the semiconductor that are responsible for trapping the charge carriers.