Ever since the isolation of single-layer (1L) graphene in 2004 [1], two-dimensional (2-D) layered materials have been among the most extensively studied classes of materials. Graphene consists of one plane of carbon atoms that are interconnected by covalent bonds and within the multilayer material adjacent graphene layers are interacting with weak van der Waals forces. Although potential applications of graphene are diverse, the absence of energy band-gap limits its use in electronics, for example in the production of transistors that would replace traditional ones made up of silicon. Potential replacement candidates are materials with semiconducting properties such as transition metal dichalgogenides (TMDs). Their general formula is MX2 and one layer of such material consists of three planes: X-M-X where X represents chalcogen atom (S, Se or Te) and M is an atom of transition metal (Mo or W). In addition to so called homostructures - structures composed of only one type of material (MoS2, WS2 etc.) it is possible to synthesize van der Waals heterostructures - structures created by combination of different 2-D materials. Such hybrid materials have new, combined and synergic properties of their constituents and therefore a universal technique of determining the type of material, its thickness, the relative orientation of crystalline axes etc. is required. Technique which meets these requirements is Raman spectroscopy which investigates vibration of the crystal lattice in materials. Particularly interesting is the low-energy Raman spectra which is a direct consequence of the rigid oscillations of adjacent layers. One layer, which can contain three planes of atoms, is considered to be one particle which is connected to adjacent layer (particle) by a spring. Low-energy Raman modes include two different types of oscillation: shear modes - two adjacent layers oscillate in anti-phase along the x-y plane and layer-breathing modes - two adjacent layers oscillate along z-axis, which is perpendicular to the x-y plane and thus are either approaching or moving away from each other. It has been demonstrated that these low-energy Raman modes are more effective at determining layer numbers, stacking configurations and provide a unique opportunity to study interlayer coupling. Low-energy Raman modes have weaker intensity compared to the high-energy Raman modes and due to their proximity to the strong Rayleigh line background, it makes their detection more challenging and demanding. Recent progress in spectroscopic methods makes it possible to experimentally observe these low-energy Raman modes. In this work, existing experimental setup was upgraded with appropriate filters that enabled investigation of low-energy Raman modes of various materials: mechanically exfoliated graphite samples and WSe2 and samples synthesized by CVD method MoS2 and WS2, followed by an analysis of the obtained Raman spectra. It was observed that in the case of graphite and WS2 samples the low-energy Raman spectra have no noticeable differences for different layer thicknesses. The reason for this behaviour is large excitation of carriers in doped Si/SiO2 substrate in case of graphite samples, while in WS2 there is a resonant Raman scattering: laser with 532 nm wavelength has similar energy as the absorption B exciton which then diminishes shear and layer-breathing modes. The other two materials: MoS2 and WSe2 reproduced theoretically predicted results: the frequency of shear mode increases with the increase of the number of layers while the frequency of layer-breathing mode decreases. As a complementary technique in determining the number of layers in materials, the atomic force microscope - AFM was used. It reproduced theoretical results for CVD grown samples (MoS2 and WS2) while for the mechanically exfoliated materials measured thicknesses were much larger than expected. The discrepancy is caused by the presence of impurities on the substrate or confined bubbles of water vapour or air which formed during mechanical exfoliation of the material.