prikaz prve stranice dokumenta General theory of intraband relaxation processes in heavily doped graphene
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General theory of intraband relaxation processes in heavily doped graphene
Physical review B: Condensed matter and materials physics, 91 (2015), 20; 205428. https://doi.org/10.1103/PhysRevB.91.205428
Kupčić, Ivan

Institucijski repozitorij: Repozitorij Prirodoslovno-matematičkog fakulteta

Citirajte ovaj rad

Kupčić, I. (2015). General theory of intraband relaxation processes in heavily doped graphene. Physical review B: Condensed matter and materials physics, 91. (20). doi: 10.1103/PhysRevB.91.205428

Kupčić, Ivan. "General theory of intraband relaxation processes in heavily doped graphene." Physical review B: Condensed matter and materials physics, vol. 91, br. 20, 2015. https://doi.org/10.1103/PhysRevB.91.205428

Kupčić, Ivan. "General theory of intraband relaxation processes in heavily doped graphene." Physical review B: Condensed matter and materials physics 91, br. 20 (2015). https://doi.org/10.1103/PhysRevB.91.205428

Kupčić, I. (2015) 'General theory of intraband relaxation processes in heavily doped graphene', Physical review B: Condensed matter and materials physics, 91(20). doi: 10.1103/PhysRevB.91.205428

Kupčić I. General theory of intraband relaxation processes in heavily doped graphene. Physical review B: Condensed matter and materials physics [Internet]. 2015. [pristupljeno 03.11.2024.];91(20). doi: 10.1103/PhysRevB.91.205428

I. Kupčić, "General theory of intraband relaxation processes in heavily doped graphene", Physical review B: Condensed matter and materials physics, vol. 91, br. 20, 2015. [Online]. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:179348. [Citirano: 03.11.2024.]

Za citiranje koristite ovu mrežnu adresu: https://urn.nsk.hr/urn:nbn:hr:217:179348
Podaci o radu
Naslov (engleski)General theory of intraband relaxation processes in heavily doped graphene
AutorIvan Kupčić
Autorova ustanovaSveučilište u Zagrebu
Prirodoslovno-matematički fakultet
(Fizički odsjek)
Znanstveno / umjetničko
područje, polje i grana		PRIRODNE ZNANOSTI
Fizika
Sažetak (engleski)
The frequency and wave-vector-dependent memory function in the longitudinal conductivity tensor of weakly interacting electronic systems is calculated by using an approach based on quantum transport equations. In this paper, we show that there is a close relation between the single-electron self-energy, the electron-hole pair self-energy, and the memory function. It is also shown in which way singular long-range Coulomb interactions, together with other q ≈ 0 scattering processes, drop out of both the memory function and the related transport equations. The theory is illustrated on heavily doped graphene, which is the prototype of weakly interacting single-band electron-phonon systems. A steplike increase of the width of the quasiparticle peak in angle-resolved photoemission spectra at frequencies of the order of the frequency of in-plane optical phonons is shown to be consistent with the behavior of an intraband plasmon peak in the energy loss spectroscopy spectra. Both anomalies can be understood as a direct consequence of weak electron scattering from in-plane optical phonons.
Ključne riječi (engleski)
Jezikengleski
Vrsta publikacijeZnanstveni rad - Izvorni znanstveni rad
Status objaveObjavljen
Vrsta recenzijeRecenziran - međunarodna recenzija
Verzija publikacijeObjavljena verzija rada (izdavačev PDF)
Naslov časopisaPhysical review B: Condensed matter and materials physics
Brojčani podacivol. 91, br. 20, 205428
p-ISSN1098-0121
e-ISSN1550-235X
DOIhttps://doi.org/10.1103/PhysRevB.91.205428
URN:NBNurn:nbn:hr:217:179348
Datum objave publikacije2015
ProjektŠifra: 119-1191458-0512
Naziv (hrvatski): Niskodimenzionalni jako korelirani vodljivi sustavi
Voditelj: Slaven Barišić
Pravna nadležnost: Hrvatska
Financijer: MZOS
Linija financiranja: ZP
URL dokumentahttp://link.aps.org/doi/10.1103/PhysRevB.91.205428
Vrsta resursaTekst
Prava pristupaOtvoreni pristup
Uvjeti korištenjaIkona licence Zaštićeno autorskim pravom.
Javna napomenaCopyright (2015) by the American Physical Society. Received 20 February 2015; revised manuscript received 16 April 2015; published 20 May 2015.
Datum i vrijeme pohrane2020-01-11 19:29:01