In this work minority carrier traps in as-grown n-type 4H-SiC Schottky barrier diode (SBD) are studied. In the first part of the work the main focus is on silicon carbide (SiC) as a material and on its physical and electrical characteristics. Application of SiC in the modern world is getting more and more broad and wide every day mainly because of exceptional characteristics that are mentioned in this paper. Minority carriers in as-grown n-type 4H-SiC semi-transparent SBD are studied by MCTS (minority carrier transient spectroscopy) method which is, in comparison with until recently most commonly used DLTS (deep level transient spectroscopy) method, focused on studying specifically minority carriers and it is using optical excitation for detection of minority carrier traps instead of electric pulse which is used in DLTS measurements. This study was carried out at Ruđer Bošković Institute as a part of Laboratory for semiconductors, Division of Materials Physics using MCTS device. The quality of SBD was investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. After the analysis of measurements and results two peaks are dominant on the MCTS spectrum which we recognize as substitutional boron incorporation on Si sites (peak B) and C sites (peak D) inside of crystal lattice. Peak B activation energy was on E_V + 0.21 eV, while peak D activation energy was on E_V + 0.62 eV. Therefore, B and D peaks are assigned to boron substitutional incorporation on silicon B_Si site and carbon B_C site inside crystal lattice.